Anhydrous Silanization and Antibody Immobilization on Hotwire CVD Deposited Silicon Oxynitride Films

Joshi, M., Singh, S., Swain, B., Patil, S. , Dusane, R., Rao, R. and Mukherji, S. (2005) Anhydrous Silanization and Antibody Immobilization on Hotwire CVD Deposited Silicon Oxynitride Films. In: First India Annual Conference, 2004 (IEEE INDICON 2004), Kharagpur, India, 20-22 Dec 2004, pp. 538-541. ISBN 0780369093 (doi:10.1109/INDICO.2004.1497814)

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Abstract

Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O/sub 2/ plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Joshi, M., Singh, S., Swain, B., Patil, S., Dusane, R., Rao, R., and Mukherji, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:0780369093

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