Hybrid magnetoresistive∕microelectromechanical devices for static field modulation and sensor 1∕f noise cancellation

Guedes, A., Patil, S.B. , Cardoso, S., Chu, V., Conde, J. P. and Freitas, P. P. (2008) Hybrid magnetoresistive∕microelectromechanical devices for static field modulation and sensor 1∕f noise cancellation. Journal of Applied Physics, 103(7), 07E924. (doi:10.1063/1.2837661)

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Abstract

Low frequency 1∕f1∕f noise in magnetoresistive (MR) spin valve sensors was suppressed by modulating an external dc magnetic field at high frequency microelectromechanical system using a (MEMS) microcantilever structure with an integrated magnetic flux guide. With this hybrid MR∕MEMS device, direct detection of dc magnetic fields in the sensor high frequency thermal noise regime was achieved. The microcantilever was actuated using a gate electrode by applying an ac voltage with frequency ff, causing it to oscillate at 2f2f. Measurements show detection of a dc magnetic field at 2f2f frequency (400kHz)(400kHz), where sensor 1∕f1∕f noise is two orders of magnitude lower than dc.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Guedes, A., Patil, S.B., Cardoso, S., Chu, V., Conde, J. P., and Freitas, P. P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550
Published Online:11 March 2008

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