Comparison of the mechanical and resonance properties of thin film silicon MEMS fabricated at 110 and 250 °C

Patil, S. B. , Chu, V. and Conde, J. P. (2009) Comparison of the mechanical and resonance properties of thin film silicon MEMS fabricated at 110 and 250 °C. Journal of Micromechanics and Microengineering, 19(2), 025018. (doi:10.1088/0960-1317/19/2/025018)

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Abstract

Microbridges with a thin film hydrogenated amorphous silicon structural layer deposited at 100 °C and 250 °C were fabricated by surface micromachining on glass substrates using aluminum as the sacrificial layer. These microbridges were electrostatically actuated and their frequency response was measured optically. The resonance frequency and quality factors of the microbridges were measured and used to characterize their mechanical properties. A comparison is made to microbridges with the structural layer deposited at 100 °C using a photoresist as a sacrificial layer. Microbridges fabricated using an Al sacrificial layer process show the presence of measurable axial residual stresses and have higher quality factors.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Patil, S. B., Chu, V., and Conde, J. P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Micromechanics and Microengineering
Publisher:IOP Publishing Ltd.
ISSN:0960-1317
ISSN (Online):1361-6439
Published Online:20 January 2009

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