Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

Sun, J., Patil, S. B. , Soh, Y.-A. and Kosel, J. (2012) Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device. Applied Physics Express, 5(3), 033002. (doi:10.1143/APEX.5.033002)

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Abstract

A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562 Ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Sun, J., Patil, S. B., Soh, Y.-A., and Kosel, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Express
Publisher:IOP Publishing
ISSN:1882-0778
ISSN (Online):1882-0786

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