Monitoring of carrier lifetime in GaAs substrate-epi-layer structures by space-resolved transient microwave absorption

Gaubas, E., Vaitkus, J. and Smith, K.M. (2001) Monitoring of carrier lifetime in GaAs substrate-epi-layer structures by space-resolved transient microwave absorption. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 460(1), 35 -40. (doi: 10.1016/S0168-9002(00)01092-5)

Abstract

New techniques of transient microwave absorption and their application for the extraction of recombination parameters of SI GaAs with different doping concentrations and layered n(+)- epi-GaAs structures are presented. Experimentally obtained decay kinetic shape and lifetime variations indicate multi- centre recombination and trapping effects. In highly doped material the extracted absolute carrier lifetime values of 10- 50 ns in the substrate and 300-500 ns in the epi-layer allow the evaluation of the higher quality of the epi-layer. A depth scan of the excess carrier decay in the epi-layer revealed that carrier lifetime Values of 1-3 mus measured in the undoped material are nearly homogeneous in the epi-layer, while they decrease towards the epi-substrate boundary.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Vaitkus, Prof Juozas and Smith, Professor Kenway
• Authors: Gaubas, E., Vaitkus, J., and Smith, K.M.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
• Publisher: Elsevier BV
• ISSN: 0168-9002
• ISSN (Online): 1872-9576