Gallacher, K. et al. (2017) Mid-infrared n-Ge on Si Plasmonic Based Microbolometer Sensors. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, Germany, 23-25 Aug 2017, pp. 3-4. ISBN 9781509065684 (doi: 10.1109/GROUP4.2017.8082167)
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152542.pdf - Accepted Version 981kB |
Abstract
The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor.
| Item Type: | Conference Proceedings |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and Gallacher, Dr Kevin |
| Authors: | Gallacher, K., Millar, R. W., Giliberti, V., Calandrini, E., Baldassarre, L., Frigerio, J., Ballabio, A., Sakat, E., Pellegrini, G., Isella, G., Ortolani, M., Biagioni, P., and Paul, D. J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 1949-209X |
| ISBN: | 9781509065684 |
| Published Online: | 26 October 2017 |
| Copyright Holders: | Copyright © 2017 IEEE |
| First Published: | First published in 2017 IEEE 14th International Conference on Group IV Photonics (GFP): 3-4 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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