Mid-infrared n-Ge on Si Plasmonic Based Microbolometer Sensors

Gallacher, K. et al. (2017) Mid-infrared n-Ge on Si Plasmonic Based Microbolometer Sensors. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, Germany, 23-25 Aug 2017, pp. 3-4. ISBN 9781509065684 (doi:10.1109/GROUP4.2017.8082167)

Gallacher, K. et al. (2017) Mid-infrared n-Ge on Si Plasmonic Based Microbolometer Sensors. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, Germany, 23-25 Aug 2017, pp. 3-4. ISBN 9781509065684 (doi:10.1109/GROUP4.2017.8082167)

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Abstract

The detection and amplification of molecular absorption lines from a chemical weapons simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. A free-standing Si0.25Ge0.75 microbolometer detector with n-Ge plasmonic antenna is demonstrated as an integrated mid-infrared plasmonic sensor.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Mr Ross and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Gallacher, K., Millar, R. W., Giliberti, V., Calandrini, E., Baldassarre, L., Frigerio, J., Ballabio, A., Sakat, E., Pellegrini, G., Isella, G., Ortolani, M., Biagioni, P., and Paul, D. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1949-209X
ISBN:9781509065684
Published Online:26 October 2017
Copyright Holders:Copyright © 2017 IEEE
First Published:First published in 2017 IEEE 14th International Conference on Group IV Photonics (GFP): 3-4
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG