Heavily-doped Germanium on Silicon with Activated Doping Exceeding 1020 cm−3 as an Alternative to Gold for Mid-infrared Plasmonics

Frigerio, J. et al. (2017) Heavily-doped Germanium on Silicon with Activated Doping Exceeding 1020 cm−3 as an Alternative to Gold for Mid-infrared Plasmonics. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, Germany, 23-25 Aug 2017, pp. 9-10. ISBN 9781509065684 (doi:10.1109/GROUP4.2017.8082170)

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Abstract

Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm-3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Frigerio, J., Ballabio, A., Pellegrini, G., Gallacher, K., Giliberti, V., Baldassarre, L., Milazzo, R., Huet, K., Mazzamuto, F., Biagioni, P., Paul, D. J., Ortolani, M., Napolitani, E., and Isella, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1949-209X
ISBN:9781509065684
Published Online:26 October 2017
Copyright Holders:Copyright © 2017 IEEE
First Published:First published in 2017 IEEE 14th International Conference on Group IV Photonics (GFP): 9-10
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG