Frigerio, J. et al. (2017) Heavily-doped Germanium on Silicon with Activated Doping Exceeding 1020 cm−3 as an Alternative to Gold for Mid-infrared Plasmonics. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, Germany, 23-25 Aug 2017, pp. 9-10. ISBN 9781509065684 (doi: 10.1109/GROUP4.2017.8082170)
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152539.pdf - Accepted Version 405kB |
Abstract
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm-3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Gallacher, Dr Kevin |
| Authors: | Frigerio, J., Ballabio, A., Pellegrini, G., Gallacher, K., Giliberti, V., Baldassarre, L., Milazzo, R., Huet, K., Mazzamuto, F., Biagioni, P., Paul, D. J., Ortolani, M., Napolitani, E., and Isella, G. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 1949-209X |
| ISBN: | 9781509065684 |
| Published Online: | 26 October 2017 |
| Copyright Holders: | Copyright © 2017 IEEE |
| First Published: | First published in 2017 IEEE 14th International Conference on Group IV Photonics (GFP): 9-10 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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