Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

Jacobs, K.J.P., Stevens, B.J., Baba, R., Wada, O., Mukai, T. and Hogg, R.A. (2017) Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications. AIP Advances, 7(10), 105316. (doi:10.1063/1.4997664)

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Abstract

We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 – 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hogg, Professor Richard and Baba, Mr Razvan
Authors: Jacobs, K.J.P., Stevens, B.J., Baba, R., Wada, O., Mukai, T., and Hogg, R.A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:AIP Advances
Publisher:AIP Publishing
ISSN:2158-3226
ISSN (Online):2158-3226
Published Online:23 October 2017
Copyright Holders:Copyright © 2017 The Authors
First Published:First published in AIP Advances 7(10): 105316
Publisher Policy:Reproduced under a Creative Commons License

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