Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

Ozaki, N., Kanehira, S., Hayashi, Y., Ohkouchi, S., Ikeda, N., Sugimoto, Y. and Hogg, R. A. (2017) Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source. Journal of Crystal Growth, 477, pp. 230-234. (doi:10.1016/j.jcrysgro.2016.11.104)

Ozaki, N., Kanehira, S., Hayashi, Y., Ohkouchi, S., Ikeda, N., Sugimoto, Y. and Hogg, R. A. (2017) Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source. Journal of Crystal Growth, 477, pp. 230-234. (doi:10.1016/j.jcrysgro.2016.11.104)

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Abstract

We obtained a high-intensity and broadband emission centered at ~1 µm from InGaAs quantum three-dimensional (3D) structures grown on a GaAs substrate using molecular beam epitaxy. An InGaAs thin layer grown on GaAs with a thickness close to the critical layer thickness is normally affected by strain as a result of the lattice mismatch and introduced misfit dislocations. However, under certain growth conditions for the In concentration and growth temperature, the growth mode of the InGaAs layer can be transformed from two-dimensional to 3D growth. We found the optimal conditions to obtain a broadband emission from 3D structures with a high intensity and controlled center wavelength at ~1 µm. This method offers an alternative approach for fabricating a broadband near-infrared light source for telecommunication and medical imaging systems such as for optical coherence tomography.

Item Type:Articles
Additional Information:This study was partly supported by the Grants-in-Aid for Scientific Research (KAKENHI) Grant numbers 25286052 and 16H03858, and by The Terumo Foundation for Life Sciences and Arts.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hogg, Professor Richard
Authors: Ozaki, N., Kanehira, S., Hayashi, Y., Ohkouchi, S., Ikeda, N., Sugimoto, Y., and Hogg, R. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Crystal Growth
Publisher:Elsevier
ISSN:0022-0248
ISSN (Online):1873-5002
Published Online:25 November 2016
Copyright Holders:Copyright © 2016 Elsevier B.V.
First Published:First published in Journal of Crystal Growth 477: 230-234
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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