Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017.
Text
151262.pdf - Accepted Version Restricted to Repository staff only 474kB |
Abstract
No abstract available.
Item Type: | Conference or Workshop Item |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Lee, Mr Jaehyun and Berrada, Dr Salim and Georgiev, Professor Vihar |
Authors: | Berrada, S., Lee, J., Georgiev, V., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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