Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors

Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017.

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Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Georgiev, Dr Vihar
Authors: Berrada, S., Lee, J., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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