Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A. , Azemard-Crestani, A. and Todri-Sanial, A. (2018) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, pp. 66-67. ISBN 9781538627723 (doi:10.1109/NMDC.2017.8350506)

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Abstract

Carbon nanotubes (CNTs) due to their high electrical/thermal conductivity, high ampacity, high tolerance to electro-migration [1] and small dimensions make them an ideal candidate for future on-chip interconnects [2]. Fabricating the CNTs, random chirality and some defects are introduced which can degrade the CNT electrical properties [3]. Additionally, the contact resistance between metal and CNT presents additional parasitics that impose restraints on the electron transport. Electrical models of CNT for interconnect application were developed several years ago [4-5]. In this paper, we explored on doped and defective single-wall CNTs (SWCNT (24,0)) including contact resistance as important physical parameters to assess the performance of fabricated SWCNTs realistically for back-end-of-line (BEOL) on-chip interconnects on VLSI circuit application.

Item Type:Conference Proceedings
Additional Information:Authors would like to thank H2020 CONNECT European project. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 688612.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Georgiev, Dr Vihar
Authors: Liang, J., Lee, J., Berrada, S., Georgiev, V., Asenov, A., Azemard-Crestani, A., and Todri-Sanial, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781538627723
Published Online:30 April 2018
Copyright Holders:Copyright © 2017 IEEE
First Published:First published in 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC): 66-67
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
701891CONNECTAsen AsenovEuropean Commission (EC)688612ENG - ENGINEERING ELECTRONICS & NANO ENG