Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study

Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, (doi:10.23919/SISPAD.2017.8085263)

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Abstract

In this work, we observed the signatures of isotropic charge distributions showing the same attributes as the golden ratio (Phi) described in art and architecture, we also present a simulation study of ultra-scaled n-type silicon nanowire transistors (NWT) for the 5nm CMOS application. Our results reveal that the amount of mobile charge in the channel is determined by the device geometry and could also be related to the golden ratio (Phi). We also established a link between the main device characteristics, such as a drive and leakage current, and cross-sectional shape and dimensions of the device. We discussed the correlation between the main Figure of Merit (FoM) and the device variability and reliability.

Item Type:Conference Proceedings
Additional Information:We acknowledge funding from the European Union under the SUPERAID7 project.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Georgiev, Dr Vihar and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali and Adamu-Lema, Dr Fikru
Authors: Al-Ameri, T., Georgiev, V.P., Adamu-Lema, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2017 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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