Many-Body Effects in 1D Degenerately-Doped Silicon Nanowire Devices

Mirza, M. M.A. , Schupp, F.J., Mol, J.A., MacLaren, D. , Briggs, G.A.D. and Paul, D. (2017) Many-Body Effects in 1D Degenerately-Doped Silicon Nanowire Devices. Silicon Quantum Information Processing (SiQIP), Lancaster, UK, 11 Sep 2017.

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Nanowire transistors are being investigated to solve short-channel effects in future CMOS technology nodes [1][2] but such devices are also a potential scalable platform for quantum information processing devices. Here we demonstrate degenerately-doped silicon nanowires with 8.0 ± 0.5 nm diameter using a wrap-around gate junction-less transistor based on silicon-on-insulator (SOI) structure [1], fabricated using top-down approach involves electron-beam lithography [2], low damage dry etch [3] and thermal oxidation. As the nanowire diameter is scaled below the Fermi wavelength, the channel switches from metallic to insulating behaviour demonstrating 1D electron transport characteristics with excellent electrostatic control of the channel. In this regime, near ideal sub-threshold (SS) slopes of 66 mV/dec at room temperature, Ion/Ioff ratios above 108 and Ion up to 35 μA/nanowire (4.4 mA/μm gate width) at VD=Vg=1.5 V are observed. Universal conductance scaling as a function of voltage and temperature comparable to previous reports of Luttinger liquid transport and Coulomb gap behaviour at low temperatures indicate that many body effects including electron-electron interactions are significant in describing the electron transport. Our results indicates many body effects such as electron-electron interactions are essential in determining the electron transport in such ultra-scaled nanowires. Routes to multiple gate devices for coupled quantum dots will be described. 1. M.M. Mirza, et al., Scientific Reports, 7, 3004 (2017). 2. C. Busche, et. al., Nature 515, 545 (2014). 3. M.M. Mirza, et al., JVST-B, 30, 06FF02 (2012).

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Paul, Professor Douglas and MacLaren, Dr Donald
Authors: Mirza, M. M.A., Schupp, F.J., Mol, J.A., MacLaren, D., Briggs, G.A.D., and Paul, D.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
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