CMOS Terahertz Metamaterial Based 64 × 64 Bolometric Detector Arrays

Escorcia Carranza, I. , Grant, J. , Gough, J. and Cumming, D. R.S. (2017) CMOS Terahertz Metamaterial Based 64 × 64 Bolometric Detector Arrays. In: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Cancun, Mexico, 27 Aug - 01 Sep 2017, ISBN 9781509060504 (doi:10.1109/IRMMW-THz.2017.8067138)

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Abstract

We present two terahertz detectors composed of microbolometer sensors (vanadium oxide and silicon pn diode) and metamaterial absorbers monolithically integrated into a complementary metal oxide semiconductor (CMOS) process. The metamaterial absorbers were created using the metal-dielectric-metal layers of a commercial CMOS technology resulting in low-cost terahertz detectors. The scalability of this technology was used to form a 64 × 64 pixel terahertz focal plane array.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Grant, Dr James and Cumming, Professor David and Gough, Mr John and Escorcia Carranza, Dr Ivonne
Authors: Escorcia Carranza, I., Grant, J., Gough, J., and Cumming, D. R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Microsystem Technology Group
ISSN:2162-2035
ISBN:9781509060504
Published Online:16 October 2017
Copyright Holders:Copyright © 2017 IEEE
First Published:First published in 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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