Paul, D. J. et al. (2017) n-Ge on Si for Mid-Infrared Plasmonic Sensors. In: IEEE Photonics Society Summer Topical Meeting Series (SUM 2017), San Juan, Puerto Rico, 10-12 Jul 2017, pp. 125-126. ISBN 9781509065714 (doi: 10.1109/PHOSST.2017.8012682)
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Abstract
The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Millar, Dr Ross and Paul, Professor Douglas and Gallacher, Dr Kevin |
| Authors: | Paul, D. J., Gallacher, K., Millar, R. W., Giliberti, V., Calandrini, E., Baldassarre, L., Fischer, M. P., Frigerio, J., Ballabio, A., Sakat, E., Pellegrini, G., Brida, D., Isella, G., Ortolani, M., and Biagioni, P. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 2376-8614 |
| ISBN: | 9781509065714 |
| Copyright Holders: | Copyright © 2017 IEEE |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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