Gupta, S., Vilouras, A. , Heidari, H. and Dahiya, R. (2017) Device Modelling of Silicon Based High-Performance Flexible Electronics. In: 2017 IEEE 26th International Symposium on Industrial Electronics, Edinburgh, UK, 19-21 Jun 2017, pp. 2089-2092. ISBN 9781509014125 (doi: 10.1109/ISIE.2017.8001578)
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Abstract
The area of flexible electronics is rapidly expanding and evolving. With applications requiring high speed and performance, ultra-thin silicon-based electronics has shown its prominence. However, the change in device response upon bending is a major concern. In absence of suitable analytical and design tool friendly model, the behavior under bent condition is hard to predict. This poses challenges to circuit designer working in the bendable electronics field, in laying out a design that can give a precise response in a stressed condition. This paper presents advances in this direction and investigates the effect of compressive and tensile stress on the performance of NMOS and PMOS transistor and a touch sensor comprising a transistor and piezoelectric capacitor.
| Item Type: | Conference Proceedings |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vilouras, Anastasios and Heidari, Professor Hadi and Dahiya, Professor Ravinder and Gupta, Mr Shoubhik |
| Authors: | Gupta, S., Vilouras, A., Heidari, H., and Dahiya, R. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 2163-5145 |
| ISBN: | 9781509014125 |
| Published Online: | 08 August 2017 |
| Copyright Holders: | Copyright © 2017 IEEE |
| First Published: | First published in 2017 IEEE 26th International Symposium on Industrial Electronics: 2089-2092 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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