Strain balancing of metal-organic vapour phase epitaxy InAs/GaAs quantum dot lasers

Roberts, T. S. et al. (2017) Strain balancing of metal-organic vapour phase epitaxy InAs/GaAs quantum dot lasers. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), pp. 1-8. (doi:10.1109/JSTQE.2017.2703666)

[img]
Preview
Text
149718.pdf - Accepted Version

1MB

Abstract

Incorporation of a GaAs0.8P0.2 layer allows strain balancing to be achieved in self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic vapor phase epitaxy. Tuneable wavelength and high density are obtained through growth parameter optimization, with emission at 1.27 μm and QD layer density 3 × 10 10 cm-2. Strain balancing allows close vertical stacking (30 nm) of the QD layers, giving the potential for increased optical gain. Modeling and device characterization indicates minimal degradation in the optical and electrical characteristics unless the phosphorus percentage is increased above 20%. Laser structures are fabricated with a layer separation of 30 nm, demonstrating low temperature lasing with a threshold current density of 100 A/cm2 at 130 K without any facet coating.

Item Type:Articles
Additional Information:This work was supported by the EPSRC under Grant EP/I018328/1.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roberts, Timothy and Orchard, Jonathan and Childs, Dr David and Hogg, Professor Richard and Babazadeh, Dr Nasser and Tooley, Ian
Authors: Roberts, T. S., Stevens, B. J., Clarke, E., Tooley, I., Orchard, J., Farrer, I., Childs, D. T.D., Babazadeh, N., Ozaki, N., Mowbray, D., and Hogg, R. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Selected Topics in Quantum Electronics
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1077-260X
ISSN (Online):1558-4542
Published Online:11 May 2017
Copyright Holders:Copyright © 2017 IEEE
First Published:First published in IEEE Journal of Selected Topics in Quantum Electronics 23(6):1-6
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

University Staff: Request a correction | Enlighten Editors: Update this record