Simulation Based DC and Dynamic Behaviour Characterization of Z2FET

Adamu-Lema, F., Duan, M. , Navarro, C., Georgiev, V. , Cheng, B., Wang, X., Millar, C., Gamiz, F. and Asenov, A. (2017) Simulation Based DC and Dynamic Behaviour Characterization of Z2FET. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 317-320. (doi:10.23919/SISPAD.2017.8085328)

149423.pdf - Accepted Version



This work presents a TCAD investigation of the operation of a Z2FET device for memory application, where the TCAD model is well calibrated to experimental hysteresis curves. The DC operation of the Z2FET has been analyzed for 4 cases, based on the permutations of the front and back gate biases, to identify and compare different modes of operation. The memory mode of operation is under the “Thyristor” like scenario with positive and negative biases applied to the front and back gates respectively. The dynamic property of Z2FET as a memory device is shown and its operation mechanism is described.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Wang, Dr Xingsheng and Asenov, Professor Asen and Duan, Meng and Cheng, Dr Binjie and Georgiev, Dr Vihar and Adamu-Lema, Dr Fikru
Authors: Adamu-Lema, F., Duan, M., Navarro, C., Georgiev, V., Cheng, B., Wang, X., Millar, C., Gamiz, F., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2017 The Japan Society of Applied Physics
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
702351REMINDERAsen AsenovEuropean Commission (EC)687931ENG - ENGINEERING ELECTRONICS & NANO ENG