Investigation on the Amplitude of Random Telegraph Noise (RTN) in Nanoscale MOSFETs: Scaling Limit of “Hole in the Inversion Layer” Model

Zhang, Z., Zhang, Z., Guo, S., Wang, R., Wang, X., Cheng, B., Asenov, A. and Huang, R. (2016) Investigation on the Amplitude of Random Telegraph Noise (RTN) in Nanoscale MOSFETs: Scaling Limit of “Hole in the Inversion Layer” Model. In: 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, 25-28 Oct 2016, pp. 453-455. ISBN 9781467397193 (doi: 10.1109/ICSICT.2016.7998949)

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Abstract

In this paper, the widely adopted “hole in the inversion layer” (HIL) model for predicting the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs, is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L<;20nm and/or W<;10nm, due to the non-negligible impact from source/drain and the failure of assumed equivalence to resistor network in ultra-scaled devices. This work provides a deeper understanding to this model and is helpful for accurate prediction of RTN amplitude in nanoscale devices and circuits.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wang, Dr Xingsheng and Asenov, Professor Asen and Cheng, Dr Binjie
Authors: Zhang, Z., Zhang, Z., Guo, S., Wang, R., Wang, X., Cheng, B., Asenov, A., and Huang, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781467397193
Copyright Holders:Copyright © 2017 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher.

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