Millar, R.W. , Dumas, D.C.S., Gallacher, K.F. , Jahandar, P., MacGregor, C., Myronov, M. and Paul, D.J. (2017) Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks. Optics Express, 25(21), pp. 25374-25385. (doi: 10.1364/OE.25.025374) (PMID:29041205)
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Abstract
GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3–5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and Dumas, Dr Derek and Gallacher, Dr Kevin |
Authors: | Millar, R.W., Dumas, D.C.S., Gallacher, K.F., Jahandar, P., MacGregor, C., Myronov, M., and Paul, D.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Optics Express |
Publisher: | Optical Society of America |
ISSN: | 1094-4087 |
ISSN (Online): | 1094-4087 |
Published Online: | 05 October 2017 |
Copyright Holders: | Copyright © 2017 Optical Society of America |
First Published: | First published in 25(21):25374-25385 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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