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Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

Cusco, R., Artus, L., Ibanez, J., Blanco, N., Gonzalez-Diaz, G., Rahman, M., and Long, A.R. (2000) Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Journal of Applied Physics, 88 (11). 6567 -6570. ISSN 0021-8979 (doi:10.1063/1.1322593)

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Publisher's URL: http://dx.doi.org/10.1063/1.1322593

Abstract

We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Long, Prof Andrew
Authors: Cusco, R., Artus, L., Ibanez, J., Blanco, N., Gonzalez-Diaz, G., Rahman, M., and Long, A.R.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Applied Physics
ISSN:0021-8979

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