SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs

Barker, J.R., Watling, J.R. and Ferrari, G. (2006) SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs. Journal of Physics: Conference Series, 38(1), pp. 184-187. (doi:10.1088/1742-6596/38/1/044)

Full text not currently available from Enlighten.

Abstract

Silicon MOSFETs with high κ gate stacks offer a significant reduction in gate leakage current, but the presence of soft surface optic phonon modes degrades the mobility. A progressively more complex set of models for SO phonon scattering at the Si-HfO2 interface is presented based upon dynamic screening models. Landau damping of the electron-phonon-plasmon coupling is examined by simple approximations. A novel approach to determining the re-normalised phonon spectrum based on Padé approximants is outlined as a route to obtaining practical scattering rate for Monte Carlo simulation.

Item Type:Articles
Keywords:Atomistic, device, devices, interface, interfaces, MOSFET, MOSFETS, scattering, si, surface, surfaces
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy
Authors: Barker, J.R., Watling, J.R., and Ferrari, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics: Conference Series
ISSN:1742-6596

University Staff: Request a correction | Enlighten Editors: Update this record