SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs

Barker, J.R., Watling, J.R. and Ferrari, G. (2006) SO phonon scattering rates at the Si-HFO2 interface in Si MOSFETs. Journal of Physics: Conference Series, 38(1), pp. 184-187. (doi: 10.1088/1742-6596/38/1/044)

Abstract

Silicon MOSFETs with high κ gate stacks offer a significant reduction in gate leakage current, but the presence of soft surface optic phonon modes degrades the mobility. A progressively more complex set of models for SO phonon scattering at the Si-HfO2 interface is presented based upon dynamic screening models. Landau damping of the electron-phonon-plasmon coupling is examined by simple approximations. A novel approach to determining the re-normalised phonon spectrum based on Padé approximants is outlined as a route to obtaining practical scattering rate for Monte Carlo simulation.

• Item Type: Articles
• Keywords: Atomistic, device, devices, interface, interfaces, MOSFET, MOSFETS, scattering, si, surface, surfaces
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Barker, Professor John and Watling, Dr Jeremy
• Authors: Barker, J.R., Watling, J.R., and Ferrari, G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Physics: Conference Series
• ISSN: 1742-6596