Intrinsic Parameter Fluctuations in Conventional MOSFETs until end of the ITRS

Roy, S. (2006) Intrinsic Parameter Fluctuations in Conventional MOSFETs until end of the ITRS. Journal of Physics: Conference Series, 38(1), pp. 188-191. (doi: 10.1088/1742-6596/38/1/045)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Professor Scott
Authors: Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics: Conference Series
Publisher:Institute of Physics Publishing Ltd.
ISSN:1742-6588

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
379901Statistical 3d simulation of intrinsic parameter fluctuations in decanoneter MOSFETS introduced by discreteness of charge and matterAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)GR/T18271/01Electronic and Nanoscale Engineering