Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness

Califano, M. et al. (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75, (doi:10.1103/PhysRevB.75.045338)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Califano, M., Vinh, N., Phillips, P., Ikonic, Z., Kelsall, R., Harrison, P., Pidgeon, C., Murdin, B., Paul, D., Townsend, P., Zhang, J., Ross, I., and Cullis, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physical Review B
Publisher:American Physical Society
ISSN:1098-0121
ISSN (Online):1550-235X

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