Califano, M. et al. (2007) Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness. Physical Review B, 75, (doi: 10.1103/PhysRevB.75.045338)
Full text not currently available from Enlighten.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | Califano, M., Vinh, N., Phillips, P., Ikonic, Z., Kelsall, R., Harrison, P., Pidgeon, C., Murdin, B., Paul, D., Townsend, P., Zhang, J., Ross, I., and Cullis, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Physical Review B |
Publisher: | American Physical Society |
ISSN: | 1098-0121 |
ISSN (Online): | 1550-235X |
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