Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

Zhao, M., Karim, A., Ni, W., Pidgeon, C., Phillips, P., Carder, D., Murdin, B., Fromherz, T. and Paul, D. (2006) Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering. Journal of Luminescence, 121, pp. 403-408. (doi:10.1016/j.jlumin.2006.08.080)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Zhao, M., Karim, A., Ni, W., Pidgeon, C., Phillips, P., Carder, D., Murdin, B., Fromherz, T., and Paul, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Luminescence

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