Kalna, K., Yang, L. and Asenov, A. (2003) Simulation study of high performance III-V MOSFETs for digital applications. Journal of Computational Electronics, 2(2-4), pp. 341-345. (doi: 10.1023/B:JCEL.0000011449.09021.55)
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Abstract
We have studied the performance potential of an 80 nm physical gate length MOSFET with GaAs channel and high-k gate insulator using ensemble Monte Carlo simulations. The results show that a such device could deliver a 100–125% increase in the drive current compared to conventional MOSFETs with analogous channel lengths and device structure. This improvement is much higher than the 20–30% drive current increase in similar devices with strained Si channels on virtual SiGe substrates.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Kalna, Dr Karol |
| Authors: | Kalna, K., Yang, L., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Computational Electronics |
| ISSN: | 1569-8025 |
| ISSN (Online): | 1572-8137 |
| Published Online: | 02 November 2004 |
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