Martinez, A., Svizhenko, A., Anantram, M.P., Barker, J.R. and Asenov, A. (2006) A NEGF study of the effect of surface roughness on CMOS nanotransistors. Journal of Physics: Conference Series, 35(1), pp. 269-274. (doi: 10.1088/1742-6596/35/1/024)
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Abstract
Start The effect of surface roughness on the electron transport of a double gate nanotransistor has been studied. The study has been carried out using a two-dimensional nonequilibrium Green's function formalism coupled self-consistently with Poisson's equation. A novel discretisation scheme for Poisson and the Green's function equations has been implemented in order to describe properly the surface roughness. The two-dimensional electron and current density landscape for the device with surface roughness exhibit strong inhomogeneity as compare with the smooth case (non-surface roughness). The effects of the specific profile of the surface roughness do not self-average. The total macroscopic current pattern follows the microscopic detail of the roughness.
| Item Type: | Articles |
|---|---|
| Keywords: | CMOS, Devices, Green Function, Nanotransistors, Nonequilibrium Green Functions, Surface, Surface Roughness, Surface-Roughness, Transport |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Martinez, Dr Antonio |
| Authors: | Martinez, A., Svizhenko, A., Anantram, M.P., Barker, J.R., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Physics: Conference Series |
| ISSN: | 1742-6596 |
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