A NEGF study of the effect of surface roughness on CMOS nanotransistors

Martinez, A., Svizhenko, A., Anantram, M.P., Barker, J.R. and Asenov, A. (2006) A NEGF study of the effect of surface roughness on CMOS nanotransistors. Journal of Physics: Conference Series, 35(1), pp. 269-274. (doi: 10.1088/1742-6596/35/1/024)

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Start The effect of surface roughness on the electron transport of a double gate nanotransistor has been studied. The study has been carried out using a two-dimensional nonequilibrium Green's function formalism coupled self-consistently with Poisson's equation. A novel discretisation scheme for Poisson and the Green's function equations has been implemented in order to describe properly the surface roughness. The two-dimensional electron and current density landscape for the device with surface roughness exhibit strong inhomogeneity as compare with the smooth case (non-surface roughness). The effects of the specific profile of the surface roughness do not self-average. The total macroscopic current pattern follows the microscopic detail of the roughness.

Item Type:Articles
Keywords:CMOS, Devices, Green Function, Nanotransistors, Nonequilibrium Green Functions, Surface, Surface Roughness, Surface-Roughness, Transport
Glasgow Author(s) Enlighten ID:Barker, Professor John and Asenov, Professor Asen and Martinez, Dr Antonio
Authors: Martinez, A., Svizhenko, A., Anantram, M.P., Barker, J.R., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics: Conference Series

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