The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study

Martinez, A., Barker, J., Svizhenko, A., Anantram, M. and Asenov, A. (2007) The impact of random dopant aggregation in source and drain on the performance of ballistic DG Nano-MOSFETs: A NEGF study. IEEE Transactions on Nanotechnology, 6, pp. 438-445. (doi: 10.1109/TNANO.2007.899638)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Asenov, Professor Asen
Authors: Martinez, A., Barker, J., Svizhenko, A., Anantram, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Nanotechnology

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