SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices

Aubry, R., Jacquet, J., Weaver, J., Durand, O., Dobson, P., Mills, G., di Forte-Poisson, M., Cassette, S. and Delage, S. (2007) SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices. IEEE Transactions on Electron Devices, 54, pp. 385-390. (doi:10.1109/TED.2006.890380)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Weaver, Professor Jonathan and Dobson, Dr Phil
Authors: Aubry, R., Jacquet, J., Weaver, J., Durand, O., Dobson, P., Mills, G., di Forte-Poisson, M., Cassette, S., and Delage, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices

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