Low damage sputter deposition of tungsten for decanano compound semiconductor transistors

Cao, X. et al. (2005) Low damage sputter deposition of tungsten for decanano compound semiconductor transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(6), pp. 3138-3142. (doi:10.1116/1.2127937)

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Publisher's URL: http://dx.doi.org/10.1116/1.2127937

Abstract

This article investigates sputter-induced damage caused by direct current magnetron sputter coating of tungsten on GaAs based high electron mobility transistor layer structures with channels buried less than 20 nm from the surface. Van der Pauw structures were used to study the effect of tungsten sputtering on the transport properties of these shallow channels. Using this approach we established that substrate damage can be minimized by using low sputtering currents, a large source to substrate distance, and a high sputtering pressure. Unfortunately such sputtering conditions do not produce the best quality dense films necessary for device fabrication and it was necessary to establish conditions which were a compromise of film quality and substrate damage. Postsputter annealing was found to significantly reduce the damage and a loss of 10% in semiconductor conductivity was obtained for good quality tungsten films.

Item Type:Articles
Additional Information:49th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN), Orlando, FL, USA, 31 May- 3 Jun 2005
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Donaldson, Mrs Lesley and Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Grant, Mrs Fiona and Wilkinson, Professor Christopher and Holland, Dr Martin
Authors: Cao, X., Macintyre, D.S., Thoms, S., Li, X., Zhou, H., Wilkinson, C.D.W., Holland, M., Donaldson, L., McEwan, F., McLellend, H., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023

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