Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process

Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C. and Thayne, I. (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4, pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C. and Thayne, I. (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4, pp. 814-817. (doi:10.1016/j.mee.2004.03.057)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering

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