Watling, J.R., Zhao, Y.P., Asenov, A. and Barker, J.R. (2001) Non-equilibrium hole transport in deep sub-micron well-tempered Si p-MOSFETs. VLSI Design, 13, pp. 169-173.
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen |
| Authors: | Watling, J.R., Zhao, Y.P., Asenov, A., and Barker, J.R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | VLSI Design |
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