Palmer, M. et al. (2001) Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers. Applied Physics Letters, 78, pp. 1424-1426.
Full text not currently available from Enlighten.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott |
| Authors: | Palmer, M., Braithwaite, G., Grasby, T., Phillips, P., Prest, M., Parker, E., Whall, T., Parry, C., Waite, A., Evans, A., Roy, S., Watling, J., Kaya, S., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details