Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants

Markov, S., Brown, A.R., Cheng, B.J., Roy, G., Roy, S. and Asenov, A. (2007) Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants. Japanese Journal of Applied Physics, 46(4S), pp. 2112-2116. (doi:10.1143/JJAP.46.2112)

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Abstract

A three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal–oxide–semiconductor field effect transistors (MOSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example 25 nm gate length MOSFET. OTV is the primary source of gate leakage fluctuations at high gate voltage, while RD are the main factor at high drain voltage. Both OTV and RD contribute to an average increase in the magnitude of the gate leakage with respect to that of a uniform device. This reflects the exponential sensitivity of the direct tunnelling current.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Markov, Dr Stanislav and Roy, Dr Gareth and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen
Authors: Markov, S., Brown, A.R., Cheng, B.J., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Japanese Journal of Applied Physics
Publisher:Japan Society of Applied Physics
ISSN:0021-4922
ISSN (Online):1347-4065
Published Online:24 April 2007

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