Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography

Chen, Y., Macintyre, D., Boyd, E., Moran, D. , Thayne, I. and Thoms, S. (2002) Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(6), pp. 2887-2890. (doi:10.1116/1.1520564)

Chen, Y., Macintyre, D., Boyd, E., Moran, D. , Thayne, I. and Thoms, S. (2002) Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(6), pp. 2887-2890. (doi:10.1116/1.1520564)

Full text not currently available from Enlighten.

Publisher's URL: http://dx.doi.org/10.1116/1.1520564

Abstract

T-gates are commonly used in high frequency low noise transistors on III–V materials since they provide a combination of short gate length and low gate resistance. Nanoimprint lithography can produce minimum pattern feature sizes equivalent to those attainable by high resolution electron beam lithography and it has potential advantages in terms of speed and cost. The imprint lithography step must be reliable and compatible with existing device process flows. In this article we describe a bilayer resist imprinting procedure for the fabrication of 120 nm T-gates for high electron mobility transistors. The results of transistor dc characterization are also presented and are similar to those obtained for transistors fabricated on the same material with gates realized by electron beam lithography.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Thayne, Professor Iain and Macintyre, Dr Douglas and Moran, Dr David
Authors: Chen, Y., Macintyre, D., Boyd, E., Moran, D., Thayne, I., and Thoms, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023

University Staff: Request a correction | Enlighten Editors: Update this record