Votsi, H., Li, C. , Aaen, P. H. and Ridler, N. M. (2017) An active interferometric method for extreme impedance on-wafer device measurements. IEEE Microwave and Wireless Components Letters, 27(11), pp. 1034-1036. (doi: 10.1109/LMWC.2017.2750086)
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Abstract
Nano-scale devices and high-power transistors present extreme impedances, which are far removed from the 50-Ω reference impedance of conventional test equipment, resulting in a reduction in the measurement sensitivity as compared with impedances close to the reference impedance. This letter describes a novel method based on active interferometry to increase the measurement sensitivity of a vector network analyzer for measuring such extreme impedances, using only a single coupler. The theory of the method is explained with supporting simulation. An interferometry-based method is demonstrated for the first time with on-wafer measurements, resulting in an improved measurement sensitivity for extreme impedance device characterization of up to 9%.
Item Type: | Articles |
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Additional Information: | This work was supported by the Research Project 14IND02 PlanarCal EMPIR and the EPSRC under Grant EP/L02263X/1. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Li, Professor Chong |
Authors: | Votsi, H., Li, C., Aaen, P. H., and Ridler, N. M. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Microwave and Wireless Components Letters |
Publisher: | IEEE |
ISSN: | 1531-1309 |
ISSN (Online): | 1558-1764 |
Published Online: | 27 September 2017 |
Copyright Holders: | Copyright © 2017 IEEE |
First Published: | First published in IEEE Microwave and Wireless Components Letters 27(11): 1034-1036 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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