Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications

Elgaid, K., Zhou, H., Wilkinson, C.D.W. and Thayne, I.G. (2004) Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering, 73-4, pp. 452-455. (doi:10.1016/j.mee.2004.03.016)

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Abstract

n this work, a novel, high quality, high-density, deposited at room temperature ultra thin 5 nm Si3N4 metal insulator metal (MIM) capacitor process for monolithic millimetre-wave integrated circuit (MMMIC) applications is demonstrated. This process is developed using inductively coupled plasma enhanced chemical vapor deposition technique (ICP-CVD). Capacitance of 6.7 fF/μm2 and a breakdown electric field of more than 3 × 106 V cm−1 were achieved. RF characterisation and equivalent circuits models were extracted which showed an increase in capacitance per area by more than 13-fold and reduction in RF loss as silicon nitride thickness reduced from 120 to 5 nm. Comparison with high temperature conventional 300 °C PECVD Si3N4 showed comparable breakdown voltage and leakage current.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and Elgaid, Dr Khaled
Authors: Elgaid, K., Zhou, H., Wilkinson, C.D.W., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
ISSN:0167-9317
ISSN (Online):1873-5568
Published Online:19 March 2004

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