Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44, pp. 1101-1107. (doi:10.1016/j.microrel.2004.04.003)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Barker, Professor John and Watling, Dr Jeremy and Elgaid, Dr Khaled and Roy, Professor Scott and Asenov, Professor Asen
Authors: Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I., and Hackbarth, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronics Reliability

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