Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2004) Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability, 44, pp. 1101-1107. (doi: 10.1016/j.microrel.2004.04.003)
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Elgaid, Dr Khaled and Roy, Professor Scott |
| Authors: | Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I., and Hackbarth, T. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronics Reliability |
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