50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz

Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C. and Thayne, I. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26, pp. 784-786. (doi:10.1109/LED.2005.857716)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters

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