Direct imprint of sub-10 nm features into metal using diamond and SiC stamps

Lister, K.A., Thoms, S., Macintyre, D.S., Wilkinson, C.D.W., Weaver, J.M.R. and Casey, B.G. (2004) Direct imprint of sub-10 nm features into metal using diamond and SiC stamps. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22(6), pp. 3257-3259. (doi:10.1116/1.1825010)

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Publisher's URL: http://dx.doi.org10.1116/1.1825010

Abstract

We demonstrate the transfer of sub-10 nm features into nickel using a hard stamp. Nanostructures were transferred directly from diamond and SiC in a single step by pressing the stamp into nickel at room temperature. The patterns were generated using ultrahigh resolution electron beam lithography. Patterns were transferred to the diamond and SiC using RIE etching with an O2 plasma used for the diamond and a SF6+O2 mixture used for the SiC. Hydrogen Silsesquioxane was used as a resist and served as a mask in the plasma etching.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thoms, Dr Stephen and Wilkinson, Professor Christopher and Macintyre, Dr Douglas and Weaver, Professor Jonathan
Authors: Lister, K.A., Thoms, S., Macintyre, D.S., Wilkinson, C.D.W., Weaver, J.M.R., and Casey, B.G.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023

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