Slavcheva, G., Davies, J. , Brown, A. and Asenov, A. (2002) Potential fluctuations in metal-oxide-semiconductor field-effect transistors generated by random impurities in the depletion layer. Journal of Applied Physics, 91, pp. 4326-4334. (doi: 10.1063/1.1450031)
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Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Davies, Professor John |
Authors: | Slavcheva, G., Davies, J., Brown, A., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Applied Physics |
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