Potential fluctuations in metal-oxide-semiconductor field-effect transistors generated by random impurities in the depletion layer

Slavcheva, G., Davies, J. , Brown, A. and Asenov, A. (2002) Potential fluctuations in metal-oxide-semiconductor field-effect transistors generated by random impurities in the depletion layer. Journal of Applied Physics, 91, pp. 4326-4334. (doi:10.1063/1.1450031)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Davies, Professor John
Authors: Slavcheva, G., Davies, J., Brown, A., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics

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