Cao, X. and Thayne, I. (2003) Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InPHEMTs. Microelectronic Engineering, 67-8, pp. 333-337. (doi: 10.1016/S0167-9317(03)00087-X)
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Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain |
Authors: | Cao, X., and Thayne, I. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Microelectronic Engineering |
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