Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InPHEMTs

Cao, X. and Thayne, I. (2003) Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InPHEMTs. Microelectronic Engineering, 67-8, pp. 333-337. (doi:10.1016/S0167-9317(03)00087-X)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain
Authors: Cao, X., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering

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