CMOS 6-T SRAM cell design subject to ''atomistic" fluctuations

Cheng, B., Roy, S. and Asenov, A. (2007) CMOS 6-T SRAM cell design subject to ''atomistic" fluctuations. Solid-State Electronics, 51, pp. 565-571. (doi: 10.1016/j.sse.2007.02.009)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Roy, Professor Scott and Asenov, Professor Asen
Authors: Cheng, B., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Solid-State Electronics
ISSN:0038-1101

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