Cheng, B., Roy, S. and Asenov, A. (2007) CMOS 6-T SRAM cell design subject to ''atomistic" fluctuations. Solid-State Electronics, 51, pp. 565-571. (doi: 10.1016/j.sse.2007.02.009)
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Roy, Professor Scott |
| Authors: | Cheng, B., Roy, S., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Solid-State Electronics |
| ISSN: | 0038-1101 |
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