Si/SiGe heterostructure parameters for device simulations

Yang, L., Watling, J., Wilkins, R., Borici, M., Barker, J., Asenov, A. and Roy, S. (2004) Si/SiGe heterostructure parameters for device simulations. Semiconductor Science and Technology, 19, pp. 1174-1182.

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Yang, L., Watling, J., Wilkins, R., Borici, M., Barker, J., Asenov, A., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology

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