Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs

Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2005) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs. IEEE Transactions on Device and Materials Reliability, 5, pp. 103-108. (doi:10.1109/TDMR.2005.845238)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Watling, J., Yang, L., Asenov, A., Barker, J., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Device and Materials Reliability

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