High resolution structural characterisation of laser-induced defect clusters inside diamond

Salter, P. S., Booth, M. J., Courvoisier, A., Moran, D. A.J. and MacLaren, D. A. (2017) High resolution structural characterisation of laser-induced defect clusters inside diamond. Applied Physics Letters, 111(8), 081103. (doi:10.1063/1.4993118)

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Abstract

Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides, and defects within diamond. We present a transmission electron microscopy study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy indicates that the majority of the irradiated region remains as sp3 bonded diamond. Electrically conductive paths are attributed to the formation of multiple nano-scale, sp2-bonded graphitic wires and a network of strain-relieving micro-cracks.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Moran, Dr David and MacLaren, Dr Donald
Authors: Salter, P. S., Booth, M. J., Courvoisier, A., Moran, D. A.J., and MacLaren, D. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118
Copyright Holders:Copyright © 2017 The Authors
First Published:First published in Applied Physics Letters 111(8):081103
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
530721Integrating advanced nanomaterials into transformative technologiesDonald MaclarenEngineering and Physical Sciences Research Council (EPSRC)EP/I00419X/1P&A - PHYSICS & ASTRONOMY