Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition

Zhou, H., Elgaid, K., Wilkinson, C. and Thayne, I. (2006) Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics, 45(Pt.1), pp. 8388-8392. (doi:10.1143/JJAP.45.8388)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and Wilkinson, Professor Christopher and Elgaid, Dr Khaled
Authors: Zhou, H., Elgaid, K., Wilkinson, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Japanese Journal of Applied Physics
Publisher:IOP Publishing
ISSN:0021-4922
ISSN (Online):1347-4065

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