Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W. and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(5), pp. 1706-1710. (doi:10.1116/1.2778690)

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Abstract

Molecular beam epitaxy has been used to deposit Ga2O3 onto GaAs(001) to form a III-V/oxide interface. Photoluminescence is used to monitor the interface quality and to compare these films with samples known to have a low interface state density and an unpinned Fermi level. An additional flux of molecular oxygen has been used during oxide growth, and the impact on growth rate is reported. A rf plasma source is shown to produce mainly neutral atomic oxygen. Atomic oxygen has a significant impact on the oxide growth mechanism and interface quality. The performance of metal oxide semiconductor field effect transistors fabricated from GaAs structures with their surface unpinned by Ga2O3 is discussed briefly.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Reid, Mr William and Thayne, Professor Iain and Long, Professor Andrew and Hill, Mr Richard and Paterson, Dr Gary and Stanley, Professor Colin and Moran, Dr David and Holland, Dr Martin
Authors: Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W., and Long, A.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN:1071-1023
ISSN (Online):1520-8567
Published Online:20 September 2007

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