Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W. and Long, A.R. (2007) Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(5), pp. 1706-1710. (doi: 10.1116/1.2778690)

Abstract

Molecular beam epitaxy has been used to deposit Ga2O3 onto GaAs(001) to form a III-V/oxide interface. Photoluminescence is used to monitor the interface quality and to compare these films with samples known to have a low interface state density and an unpinned Fermi level. An additional flux of molecular oxygen has been used during oxide growth, and the impact on growth rate is reported. A rf plasma source is shown to produce mainly neutral atomic oxygen. Atomic oxygen has a significant impact on the oxide growth mechanism and interface quality. The performance of metal oxide semiconductor field effect transistors fabricated from GaAs structures with their surface unpinned by Ga2O3 is discussed briefly.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Hill, Mr Richard and Stanley, Professor Colin and Moran, Professor David and Reid, Mr William and Long, Professor Andrew and Paterson, Dr Gary and Holland, Dr Martin
• Authors: Holland, M., Stanley, C.R., Reid, W., Hill, R.J.W., Moran, D.A.J., Thayne, I., Paterson, G.W., and Long, A.R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
• ISSN: 1071-1023
• ISSN (Online): 1520-8567
• Published Online: 20 September 2007