Kalna, K., Wang, Q., Passlack, M. and Asenov, A. (2006) Monte Carlo simulations of delta-doping placement in sub-100 nm implant free InGaAs MOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 135, pp. 285-288. (doi: 10.1016/j.mseb.2006.08.019)
Full text not currently available from Enlighten.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Kalna, Dr Karol |
| Authors: | Kalna, K., Wang, Q., Passlack, M., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
University Staff: Request a correction | Enlighten Editors: Update this record
Deposit and Record Details
Deposit and Record Details