Fujihashi, C., Yukiya, T. and Asenov, A. (2007) Electron and hole current characteristics of n-i-p-type semiconductor quantum dot transistor. IEEE Transactions on Nanotechnology, 6, pp. 320-327. (doi: 10.1109/TNANO.2007.893570)
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen |
| Authors: | Fujihashi, C., Yukiya, T., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Nanotechnology |
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